| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a protective film material for liquid immersion lithography which allows good liquid immersion lithography, can be removed during development of a photoresist layer at the same time, and has excellent process applicability, and a pattern forming method using such a material. <P>SOLUTION: The resist protective film material contains (i) a blend of a polymer which comprises a repeating unit having a fluorine-containing alkyl group or a fluorine-containing alkylene group containing one or more fluorine atoms and, optionally, an alkali-soluble repeating unit, and a polymer which comprises a repeating unit having a fluorine-atom-free alkyl group and, optionally, an alkali-soluble repeating unit, or (ii) a polymer which comprises a repeating unit having a fluorine-containing alkyl group or a fluorine-containing alkylene group containing one or more fluorine atoms, a repeating unit having a fluorine-atom-free alkyl group and, optionally, an alkali-soluble repeating unit. <P>COPYRIGHT: (C)2007,JPO&INPIT |
