发明名称 CRYSTAL GROWTH APPARATUS AND CRYSTAL PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a crystal growth apparatus where the diffusion of an alkali metal to the outside can be certainly prevented. SOLUTION: A crucible 10 holds the mixed melt 290 of metal Na and metal Ga. A reaction vessel 20 covers the circumference of the crucible 10. A piping 30 is connected to the reaction vessel 20 at the lower side of the crucible 10. A suppression/introduction plug 60 is fixed at a part lower than a connecting part between the crucible 10 and the reaction vessel 20 in the piping 30. A gas cylinder 140 supplies nitrogen gas into the piping 30 via a pressure regulator 130. A metal melt 190 (= liquid Na) exists between the crucible 10 and the reaction vessel 20 and in the piping 30 as a liquid whose temperature is not lower than the melting temperature. The suppression/introduction plug 60 and the metal melt 190 prevent the diffusion of metal Na vapor evaporated from the mixed melt 290 into a space 31 in the piping 30 and supply nitrogen gas in the space 31 into a space 23 by the differential pressure between the space 23 and the space 31. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007137733(A) 申请公布日期 2007.06.07
申请号 JP20050335430 申请日期 2005.11.21
申请人 RICOH CO LTD 发明人 FUSE AKIHIRO;SARAYAMA SHOJI;IWATA HIROKAZU
分类号 C30B29/38;C30B9/00 主分类号 C30B29/38
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