| 摘要 |
A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.
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