发明名称 Enabling multiple memory modules for high-speed memory interfaces
摘要 In some embodiments a memory module includes a first on-chip termination device and a second on-chip termination device coupled to the first on-chip termination device to obtain an input impedance that is frequency independent. Other embodiments are described and claimed.
申请公布号 US2007126462(A1) 申请公布日期 2007.06.07
申请号 US20050294848 申请日期 2005.12.05
申请人 INTEL CORPORATION 发明人 RYU WOONG H.
分类号 H03K19/003 主分类号 H03K19/003
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