| 摘要 |
A semiconductor device is configured so that there is formed a stressor film 4 covering the first field effect transistor and the second field effect transistor, formed with openings from which the originating area and the terminating area of each of the first field effect transistor and the second field effect transistor are partially exposed, and applying a stress to at least an area extending from the vicinity of the originating area to the vicinity of the terminating area of each of the first field effect transistor and the second field effect transistor, and that a height of a first gate electrode 3 ( 3 A) in a direction substantially perpendicular to a first insulating layer is set different from a height of a second electrode 3 ( 3 B) in the direction substantially perpendicular to a second insulating layer.
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