| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide polishing solution for metal exhibiting quick polishing speed and good copper/tantalum polish selectivity and enhancing planarity by suppressing dishing. <P>SOLUTION: Polishing solution for metal used in chemical mechanical planarization of a substrate for semiconductor integrated circuit contains an amino acid derivative represented by formula (I). In the amino acid derivative represented by formula (I), a carboxy group, a hydroxy group, a carbamoyl group, alkyl group, an aryl group, a heterocycle group, or a substituent including these groups as a partial structure is preferably introduced into a molecule. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
