| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser dicing method and a laser dicing apparatus capable of forming an improved modified layer easily regardless of the thickness of a wafer and the concentration of impurities in the wafer. <P>SOLUTION: An extinction coefficient in an assumed range of the concentration of impurities injected to a support substrate is measured in advance through measuring equipment, and is approximated as a secondary function of the concentration of impurities. Then, for forming the modified layer inside the support substrate for composing a laminated SOI wafer 10, laser beams condensed by a condensing lens 30 are applied along a scheduled cutting line of the laminated SOI wafer 10. In that case, the laser beam output of a laser light source 40 is variably set according to the depth proportional to the exponential function of Napier's constant with the multiplier factor of the depth from the incident surface of laser beams in the laminated SOI wafer 10 to the condensation point of the laser beams and the absorption coefficient of the wafer 10 obtained based on the extinction coefficient of the laminated SOI wafer 10 as an exponent. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
