发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
Disclosed are nonvolatile memory devices and methods of fabricating the same. A nonvolatile memory device can include a field isolation film configured to define active regions in a substrate and a wordline configured to intersect the active regions. Devices can also include source and drain regions formed in each of the active regions at both sides of the wordline and a source line configured to extend along the wordline under the source region. Devices can further include a join region configured to connect the source region with the source line.
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申请公布号 |
US2007128798(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
US20060561019 |
申请日期 |
2006.11.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOOK-HYOUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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