| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device which has an interlayer dielectric made of a low-k film having a low relative permittivity, and can suppress delamination of the film or the like by increasing the adhesion of the low-k film while maintaining the low relative permittivity. SOLUTION: The semiconductor device includes a semiconductor substrate, a first insulating film formed in its surface with a first wiring layer having a plurality of wiring lines above the semiconductor substrate, a first cap layer formed on the first wiring layer and the first insulating film, a second insulating film formed in its surface with a second wiring layer having a plurality of wiring lines above the first cap layer, the second insulating film also having a groove reaching the first cap layer between the wiring lines of the second wiring layer, and a third insulating film buried in the groove. Since the adhesion of the third insulating film to the first cap layer is made higher than the adhesion of the second insulating film to the first cap layer, the adhesion of the low-k film can be increased and thus film delamination or the like can be effectively prevented. COPYRIGHT: (C)2007,JPO&INPIT
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