| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal oxide film having good characteristics and to improve the characteristics of a semiconductor device. <P>SOLUTION: In manufacturing the semiconductor device (e.g. ferroelectric film), for example, a film applied with a metal alkoxide used as the ferroelectric film is formed on a substrate 100, and thermal processing using a thermal source of flames of a gas burner using a mixed gas of hydrogen and oxygen as a fuel is performed to bake the film applied with metal alkoxide and to modify the ferroelectric film (metal oxide film) to be formed. By executing this thermal processing, hydrolysis and polycondensation reactions are promoted by hydroxyl group radicals (OH<SP>*</SP>) and oxygen radicals (O<SP>*</SP>) etc. in or around the flames, a non-reaction portion is reduced and the film quality of the ferroelectric film (metal oxide film) can be improved. <P>COPYRIGHT: (C)2007,JPO&INPIT |
