发明名称 BISTABLE DEVICE, BISTABLE MEMORY ELEMENT, AND THEIR MANUFACTURING METHODS
摘要 <P>PROBLEM TO BE SOLVED: To provide a bistable device and a bistable memory element which assure characteristic control capability, low-cost fabrication and stabilized characteristics, as well as to provide manufacturing methods for them. <P>SOLUTION: At least a part of each on the bistable device and the bistable memory element is composed of an organic microcrystal, and an organic bistable layer is incorporated which changes the resistance depending on the bias voltage, thus assuring the characteristic control capability, low-cost fabrication and reduced variation in the characteristics. Similarly, at least a part of each on the bistable device and the bistable memory device is composed of an organic microcrystal, and an organic bistable layer is incorporated which is switched to a low-resistance state below the predetermined resistance range or a high-resistance state above the predetermined resistance range depending on the bias voltage, thus assuring the characteristic control capability, low-cost fabrication and reduced variation in the characteristics. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007142357(A) 申请公布日期 2007.06.07
申请号 JP20060104601 申请日期 2006.04.05
申请人 RICOH CO LTD 发明人 AZUMA YASUHIRO
分类号 H01L27/10;H01L27/28;H01L45/00;H01L49/00;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L27/10
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