| 摘要 |
PURPOSE:To facilitate the manufacture of a semiconductor, by irradiating neutron onto a diamond thin film into an N type semiconductor. CONSTITUTION:Besides 6C<12>1, a little over 1% of 6C<12>2 exists in carbon the constituent of diamond and can be changed into 7N<14> by irradiating neutrons onto this atom. Since 7N<14> is a 5 group atom, it functions as the donor resulting in the generation of conductive electons 4, and accordingly the diamond thin film turns into an N type semiconductor. Since the diamond thin film can be easily changed into an N type semiconductor in this manner, this method is very useful to the manufacture of a diamond thin film semiconductor device. |
