| 摘要 |
A semiconductor device and its fabricating method are provided to enlarge a contact area between a contact and an impurity region by forming contacts having different heights in the impurity region. An impurity region(20) is formed in a semiconductor substrate(10), and an insulation layer(30) is formed on the impurity region. Contacts(40,50,60) penetrate the insulation layer to form given stepped portions in the impurity region. The contact consists of a first contact and a second contact, and the stepped portion is formed by the first and second contacts. The first contact is deeply formed in the impurity region relative to the second contact.
|
