| 摘要 |
A semiconductor memory device and its manufacturing method are provided to prevent the damage of an adjacent fuse due to the irradiation of a laser beam onto an unwanted portion by forming a barrier layer made of metal on both sides of a corresponding fuse. A semiconductor memory device includes fuses, an upper interlayer dielectric, and a metal barrier layer. The fuses(122a,122b) are formed on a lower interlayer dielectric. The upper interlayer dielectric is used for covering the fuses. The metal barrier layer(142) includes an opening portion for exposing partially each fuse to the outside, so that the metal barrier layer covers both sides of each fuse. The fuses are made of metal.
|
