| 摘要 |
A method for manufacturing a flash memory device is provided to improve the reliability by removing etch residues of a hard mask from a conductive layer using a mixed gas of CF4 and CHF3. A conductive layer, a hard mask layer(207), an organic anti-reflective coating and a photoresist pattern are sequentially formed on a semiconductor substrate(201). The organic anti-reflective coating and the hard mask layer are etched by using the photoresist pattern as an etch mask. Etch residues of the hard mask layer are removed from the conductive layer, wherein the etch residues are caused by the impurity of the organic anti-reflective coating. The conductive layer is then etched by using the hard mask layer as an etch mask.
|
