发明名称 High stability and high capacity precursor vapor generation for thin film deposition
摘要 An apparatus for vaporizing a liquid for subsequent thin film deposition on a substrate. The apparatus comprises a housing with an inlet and an outlet and a liquid reservoir. A mechanism controls the liquid level in the reservoir to a substantially constant level. A gas flow passageway extends along side a porous metal wall with interstitial spaces for containing liquid from the reservoir and with a package for a carrier gas to flow along side the porous metal wall, forming a gas/vapor mixture suitable for thin film deposition.
申请公布号 US2007120275(A1) 申请公布日期 2007.05.31
申请号 US20060605204 申请日期 2006.11.28
申请人 MSP CORPORATION 发明人 LIU BENJAMIN Y.
分类号 B01D47/00;C23C16/00;F22B23/00 主分类号 B01D47/00
代理机构 代理人
主权项
地址