发明名称 RESIST MATERIAL AND PATTERN-FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist material, especially, a resist material such as a chemical amplification positive resist material having high etching resistance by having high resolution exceeding the conventional positive resist material and having excellent pattern shape after exposure and to provide a pattern-forming method. <P>SOLUTION: The chemical amplification positive resist material includes a polymer compound in which a weight average molecular weight having a repeating unit shown by formula (1) is 1,000-500,000. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007132998(A) 申请公布日期 2007.05.31
申请号 JP20050323523 申请日期 2005.11.08
申请人 SHIN ETSU CHEM CO LTD 发明人 TAKEDA TAKANOBU;WATANABE OSAMU;MANBA DAISUKE;KANEDA TSUGIO
分类号 G03F7/039;C08F212/08;H01L21/027 主分类号 G03F7/039
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