发明名称 Base station power amplifier for memory effect minimization
摘要 A base station power amplifier for minimizing memory effect is provided. The power amplifier includes a bias circuit which supplies a direct current (DC) power to a transistor; the transistor which amplifies the DC power provided from the bias circuit; a matching circuit which transfers maximum power to a load by reducing loss of the power amplified by the transistor; and a large capacitor which lies between the matching circuit and the transistor, reduces a low-frequency second harmonic voltage by electrically connecting directly to the matching circuit, and has a preset capacitance value.
申请公布号 US2007120606(A1) 申请公布日期 2007.05.31
申请号 US20060598589 申请日期 2006.11.13
申请人 POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 LEE JONG-SUNG;SONG KEUN-HYO;KIM HAN-SEOK;CHO SEI-JEI;JEONG JOONG-HO;KIM BUMMAN;CHA JEONGHYEON
分类号 H03F3/191 主分类号 H03F3/191
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