发明名称 |
Base station power amplifier for memory effect minimization |
摘要 |
A base station power amplifier for minimizing memory effect is provided. The power amplifier includes a bias circuit which supplies a direct current (DC) power to a transistor; the transistor which amplifies the DC power provided from the bias circuit; a matching circuit which transfers maximum power to a load by reducing loss of the power amplified by the transistor; and a large capacitor which lies between the matching circuit and the transistor, reduces a low-frequency second harmonic voltage by electrically connecting directly to the matching circuit, and has a preset capacitance value.
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申请公布号 |
US2007120606(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060598589 |
申请日期 |
2006.11.13 |
申请人 |
POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
LEE JONG-SUNG;SONG KEUN-HYO;KIM HAN-SEOK;CHO SEI-JEI;JEONG JOONG-HO;KIM BUMMAN;CHA JEONGHYEON |
分类号 |
H03F3/191 |
主分类号 |
H03F3/191 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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