Circuit arrangement for controlling e.g. p-channel metal oxide semiconductor-power transistor, has gate driver circuit comprising drain follower, and differential amplifier with output that is connected with input of driver circuit

摘要

The arrangement has a gate driver circuit (GD) comprising a drain follower with a metal oxide semiconductor-driver transistor. A gate of the transistor is connected with interconnection nodes of a capacitive divider that comprises two capacitors (C1, C2) with same capacitance. One of the capacitors is connected between a drain and the gate of the transistor, and the other capacitor is connected between the gate of the transistor and an input of the driver circuit. A differential amplifier has an output connected with the input of the driver circuit.