| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory which raises an integration degree by a 2 bit preservation of a single cell, improves a memory efficiency and a speed by a source side injection effect, and reduces a cost by a simple manufacturing method, and also to provide manufacturing and operating methods of the nonvolatile memory. SOLUTION: At least 2 bit lines BL1, BL2 are arranged in parallel in a substrate 200 and are extended along a first direction. A plurality of selection gate structures 202a to 202e are respectively arranged in parallel between the 2 bit lines BL1, BL2 and are extended along the first direction. Gaps are formed between two adjacent selection gate structures 202a to 202e. The gaps between the plurality of adjacent two selection gate structures 202a to 202e are respectively filled up with a plurality of control gate lines CG1 which are arranged in parallel and are extended along a second direction intersecting with the first direction. A large number of charge storage layers 206a to 206h are arranged between the plurality of selection gate structures 202a to 202e and the plurality of control gate lines CG1, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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