Power semiconductor element and production process for many such elements has stacked semiconductor chips with wiring structure on back side metallization of the base chip

摘要

A power semiconductor element (30) comprises a base power semiconductor chip (16) on the back of which is stacked a further power semiconductor chip (17) with a wiring structure (18) within the back side metallization of the base chip. An independent claim is also included for a production process for many such power semiconductor elements.