发明名称 |
Section forming method & construction for wafer ingot growth |
摘要 |
A method and construction of growing wafer ingot by having a thermal shield disposed on an opening of a crucible, an opening approximating a polygonal contour disposed on the thermal shield to control gas current, heat conduction and heat radiation in ingot growth, an isotherm of condensation temperature in ingot growth approaching a polygonal form to grow the ingot into a form approximating the preset sectional form of a polygon for minimizing the material to be cut off in the subsequent process of slicing wafer ingot into chips. |
申请公布号 |
US2007119366(A1) |
申请公布日期 |
2007.05.31 |
申请号 |
US20060508864 |
申请日期 |
2006.08.24 |
申请人 |
SINO-AMERICAN SILICON PRODUCTS INC. |
发明人 |
LAN C.W.;HSU WEN-CHING;HSIEH KIMSAM;WANG LEIF;HO YA L. |
分类号 |
C30B7/00;C30B17/00;C30B21/02 |
主分类号 |
C30B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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