发明名称 Section forming method & construction for wafer ingot growth
摘要 A method and construction of growing wafer ingot by having a thermal shield disposed on an opening of a crucible, an opening approximating a polygonal contour disposed on the thermal shield to control gas current, heat conduction and heat radiation in ingot growth, an isotherm of condensation temperature in ingot growth approaching a polygonal form to grow the ingot into a form approximating the preset sectional form of a polygon for minimizing the material to be cut off in the subsequent process of slicing wafer ingot into chips.
申请公布号 US2007119366(A1) 申请公布日期 2007.05.31
申请号 US20060508864 申请日期 2006.08.24
申请人 SINO-AMERICAN SILICON PRODUCTS INC. 发明人 LAN C.W.;HSU WEN-CHING;HSIEH KIMSAM;WANG LEIF;HO YA L.
分类号 C30B7/00;C30B17/00;C30B21/02 主分类号 C30B7/00
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