| 摘要 |
<p>Chemical vapour deposition apparatus comprises a process chamber 10, a bubbler 34 for supplying a volatile precursor to the chamber, a vacuum pump 20 for drawing an exhaust gas from the process chamber, an abatement device 28 for treating the exhaust gas, and a bypass line 38 for conveying the precursor from the bubbler to the abatement device, the bypass line bypassing both the process chamber and the vacuum pump. The apparatus inhibits the accumulation of volatile precursors within the vacuum pump by bypassing the pump. Surplus precursors can be sent directly to the abatement device or can be held in a holding vessel (48, fig 2) first.</p> |
