发明名称 ELECTROSTATIC TYPE RELAY
摘要 PURPOSE:To permit to attempt enhancement in the mechanical strength of a moving segment and also to attempt facilitating the drive voltage adjustment, by providing moving contact layers formed on a moving segment via insulating thin-films, and fixed contact layers formed on the main surface of a substrate to be opened and closed on the moving contact layers. CONSTITUTION:A semiconductive base material is used to form a moving segment 11 pivotally supported by a monocrystallized semiconductive base material arranged oppositely via spacing means 9 on the main surface of an electrical insulating substrate 1 so that the moving segment is set on its head side to be rotatable and displaceable toward the main surface side of the substrate 1. Fixed-side electrode layers 2, 3 opposed to this moving segment 11 and for being combined with the moving segment 11 to compose driving counter electrodes, are formed on the main surface of the substrate 1, and then moving contact layers 14, 15 are formed on the moving segment 11 via electrical insulating films 13, 16 so that fixed contact layers, 4 to 7 being opened and closed by the moving contact layers 14, 15 are formed on the main surface of the substrate. Since in this manner, the moving segment 11 is formed out of the monocrystallized semiconductive base material that is a body different from the electrical insulating substrate, is facilitated. Thus, the mechanical strength of the moving segment can be enhanced, further with a space between the moving segment 11 and the substrate 1 being adjustable by the spacing means 9 so that the drive voltage adjustment may become also easier.
申请公布号 JPH02100224(A) 申请公布日期 1990.04.12
申请号 JP19880252780 申请日期 1988.10.05
申请人 OMRON TATEISI ELECTRON CO 发明人 OBA MASATOSHI;HIRANO MASAO;FUJIMOTO AKIRA;SUNAKAWA YOSHITOSHI
分类号 H01L41/09;H01H1/00;H01H1/20;H01H59/00 主分类号 H01L41/09
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