| 摘要 |
<p>Film formation is conducted at a low temperature to improve conversion efficiency and productivity and to enable a wider choice of substrate materials to be used. The invention relates to the light absorption layer of a CIS compound semiconductor thin-film solar cell and to a method of forming the layer. The light absorption layer comprises a compound represented by Cu x (In 1-y Ga y ) (Se 1-z S z ) 2 and having a chalcopyrite type structure, the proportions of the components satisfying 0.86‰ x‰ 0.98, 0.05‰ y‰ 0.25, 0‰ z‰ 0.3, x=±T+², ±=0.015y-0.00025, and ²=-7.9y+1.105, provided that T (
C) is anneal temperature and the allowable range for x is ±0.02. The layer is formed by the selenization method at a low temperature (about 500‰ T‰ 550). As the substrate is used a soda-lime glass having a low melting point.</p> |
