发明名称 |
Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer |
摘要 |
A metal contact in a semiconductor device is formed by forming an insulating layer having a contact hole therein on a silicon substrate. A cobalt layer is formed on a bottom and inner walls of the contact hole. A cobalt silicide layer is formed at the bottom of the contact hole while forming a titanium layer on the cobalt layer. A plug is formed on the titanium layer so as to fill the contact hole.
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申请公布号 |
US7223689(B2) |
申请公布日期 |
2007.05.29 |
申请号 |
US20050112356 |
申请日期 |
2005.04.22 |
申请人 |
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发明人 |
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分类号 |
H01L21/28;H01L21/4763;H01L21/285;H01L21/768 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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