Positive type photoresist composition

摘要

A positive type photoresist composition suitable for light in the wavelength region of 170 nm to 220 nm, high in sensitivity, excellent in adhesion and giving a good resist pattern profile, which comprises a resin having an ester group represented by the following general formula [I] in its molecule and a compound generating an acid by irradiation of an active light ray or radiation: wherein R₁ represents a hydrogen atom, an alkyl group or a cycloalkyl group; and R₂ and R₃, which may be the same or different, each represents a hydrogen atom, an alkyl group, a cycloalkyl group or -A-R₄, and R₂ and R₃ may combine together to form a ring, wherein R₄ represents a hydrogen atom, an alkyl group or a cycloalkyl group, R₄ and R₂ or R₃ may combine together to form a ring, and A represents an oxygen atom or a sulfur atom.