| 摘要 |
A circuit and method for generating a wordline voltage in a nonvolatile semiconductor memory device. The circuit comprises a switching unit to provide an external program voltage as the wordline voltage, together with a wordline voltage pump to generate the wordline voltage by pumping a power source voltage. After the wordline voltage is raised to a first level by the external program voltage, it is further increased by a pumping operation. According the circuit and method described herein, shortens the time required to reach a target voltage.
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