发明名称 |
Semiconductor device with mushroom electrode and manufacture method thereof |
摘要 |
A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.
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申请公布号 |
US7223645(B2) |
申请公布日期 |
2007.05.29 |
申请号 |
US20040768092 |
申请日期 |
2004.02.02 |
申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
MAKIYAMA KOZO;IKECHI NAOYA;TAN TAKAHIRO |
分类号 |
H01L21/338;H01L21/027;H01L21/28;H01L21/44;H01L29/417;H01L29/423;H01L29/43;H01L29/47;H01L29/49;H01L29/78;H01L29/812;H01L29/872 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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