| 摘要 |
PURPOSE:To associate an SBD having a small forward rising voltage VF by placing a P-N diode chip in which a base is led as an anode, on the extended part of the end of an anode lead, and placing an SBD chip on an island. CONSTITUTION:An SBD chip 22 is secured in an eutectic crystal on an island 21, and an electrode pad on the surface is wire bonded to one anode lead 23 via a gold wire 29. That is, a substrate of the chip 22 becomes a cathode leading electrode. One P-N diode chip 28 is secured to an extended part 26 of the other anode lead 24 in an eutectic crystal, and the surface electrode pad and the island are wire bonded therebetween via a gold wire 29. Accordingly, since the substrate of the chip 29 is used as an anode leading, its conductivity is reverse to that of prior art. Thus, since only the chip 22 is placed on an island 21, the chip 22 having larger Schottky junction area can be placed. |
