| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING IMMERSION LITHOGRAPHY PROCESS |
| 摘要 |
Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising pretreating a wafer with water of least about 40° C. after an exposure step and before a post-exposure baking step, thereby effectively reducing water mark defects. |
| 申请公布号 |
KR20070053465(A) |
申请公布日期 |
2007.05.25 |
| 申请号 |
KR20050111278 |
申请日期 |
2005.11.21 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG, JAE CHANG;MOON, SEUNG CHAN |
| 分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
| 代理机构 |
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代理人 |
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| 主权项 |
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