| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of microscopic production and high integration of unit cells. SOLUTION: This vertical transistor comprises a semiconductor substrate, a semiconductor layer formed on this semiconductor substrate, multiple unit cells formed on this semiconductor layer in an array shape having the stripe-shaped gate electrode, source layer and drain layer of each unit cell and gate wirings that connect gate electrodes each other, a first main electrode formed on an insulating film covering the gate electrodes and gate wirings and brought into contact with one of either the source layer or drain layer of each unit cell, an impurity diffusion layer formed at a depth level reaching the semiconductor substrate directly under the gate wiring of the semiconductor layer and drawing out the other of either the source layer or drain layer of each unit cell to the semiconductor substrate, and a second main electrode formed on the rear surface of the semiconductor substrate. COPYRIGHT: (C)2007,JPO&INPIT |
