发明名称 Power line control circuit of semiconductor device
摘要 A power line control circuit of a semiconductor device in which a width of a power line can be selectively controlled. The power line control circuit of the semiconductor device according to the present invention can selectively control the width of the power line employing the dummy power line. It is therefore possible to easily change the width of the power lines and to reduce the manufacturing cost and the manufacturing time depending on the formation of the power lines. Furthermore, the power line control circuit of the semiconductor device according to the present invention can selectively control the width of the power lines, if appropriate. Accordingly, mesh of optimized power lines can be provided. Furthermore, more stabilized product characteristics can be secured and the yield of semiconductor memory devices can be enhanced. In addition, the power line control circuit of the semiconductor device according to the present invention can selectively change power mesh corresponding to a power line method or operation mode of a product.
申请公布号 US2007114554(A1) 申请公布日期 2007.05.24
申请号 US20060490244 申请日期 2006.07.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YANG JONG Y.
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
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