| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high-purity Ta material for semiconductor devices, which can enhance in-plane uniformity of thickness of a TaN film formed by a reactive sputtering process. SOLUTION: The method for producing the high-purity Ta material for semiconductor devices comprises a step of forging a high-purity Ta ingot from two or more directions, a step of subjecting the ingot to vacuum heat treatment at least twice in the course of the forging step, a step of cold-rolling the Ta material having been subjected to the forging step and the vacuum heat treatment step, and a step of subjecting the cold-rolled Ta material to a recrystallization heat treatment. COPYRIGHT: (C)2007,JPO&INPIT
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