| 摘要 |
The present invention relates to a method of testing, in the manufacturing process of an LSI (large scale integration) device, a result obtained by the manufacturing process, a testing apparatus therefor, and a semiconductor device suitable for the test. The present invention relates, in particular, to a testing method used to immediately and accurately perform a test of the cross-sectional microstructure of an LSI device obtained by the manufacturing process. The above testing method is characterized by including a sample production step of thinning a semiconductor chip such that the semiconductor chip includes a substrate crystal and a portion added by the manufacturing process, a step of irradiating an electron beam to the semiconductor chip, a step of detecting an electron beam transmitted through the semiconductor chip to thereby obtain an electron beam diffraction image, a step of removing an electron beam diffracted due to the substrate crystal, and a step of comparing, in the electron beam diffraction image, the thickness of grating stripes obtained from the substrate crystal with the thickness of the portion added by the manufacturing process.
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