| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the heat generating efficiency of a non-volatile memory element, provided with a recording layer containing a phase changing material. <P>SOLUTION: The memory element is provided with a bottom electrode 12; a top electrode 17 provided on the bottom electrode 12; and a recording layer 18 containing the phase change material, and connecting the bottom electrode 12 to the top electrode 17. The top electrode 17 has a stereoscopic structure that is in contact with a film formation initiation surface 18a of the recording layer 18. Also, a bit line 15 provided on the top electrode 17 has the etching surface 15c formed by patterning, and an etching surface 15c of the bit line 15 contacts the film formation initiating surface 17a of the top electrode 17. This structure can reduce heat dissipation to the bit line 15, without increasing the film thickness of the recording layer 18. <P>COPYRIGHT: (C)2007,JPO&INPIT |
