EPITAXY LAYER AND METHOD OF FORMING THE SAME

摘要

A method of forming an epitaxial layer of uniform thickness is provided to improve surface flatness. A substrate is first provided and a Si base layer is then formed on the substrate by epitaxy. A Si-Ge layer containing 5 to 10% germanium is formed on the Si base layer by epitaxy to normalize the overall thickness of the Si base layer and the Si-Ge layer containing 5 to 10% germanium.