Friction reducing aid for CMP

摘要

The invention provides a chemical-mechanical polishing system for polishing a substrate comprising a polishing component, a water-soluble silicate compound, an oxidizing agent, and water, wherein the pH of the polishing system is about 8 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing system. The polishing system provides for reduced friction during polishing of substrates.