| 摘要 |
<p>The invention concerns a method of lifting off a layer of silicon-germanium (Si<SUB>i-x</SUB>Ge<SUB>x</SUB>) (106) disposed on a layer of strained silicon (104), said layer of silicon- germanium (Si<SUB>i-x</SUB>Ge<SUB>x</SUB>) (106) being intended to be lifted by selective chemical etching to expose the strained silicon layer (104), the method being characterized in that it comprises, prior to selective etching, a step of forming, in the top portion of the layer of silicon-germanium (Si<SUB>i-x</SUB>Ge<SUB>x</SUB>) (106), a surface layer of silicon oxide (SiO<SUB>2</SUB>) (108) and, in the bottom portion of the layer of silicon-germanium (Si<SUB>i-x</SUB>Ge<SUB>x</SUB>) (106), an enriched lower layer (107) with a concentration (x) of germanium which is higher than that of the layer of silicon-germanium (Si<SUB>i-x</SUB>Ge<SUB>x</SUB>) (106), said surface layer of silicon oxide (SiO<SUB>2</SUB>) (108) being formed by oxidation of the layer of silicon-germanium (Si<SUB>i-x</SUB>Ge<SUB>x</SUB>) (106).</p> |
