发明名称 Circuits and methods for data bus inversion in a semiconductor memory
摘要 A data bus inversion (DBI) circuit includes at least one DBI block configured to invert an input data signal based on the logic state of input data bits. The DBI block includes a comparison deciding unit configured to generate, in a first mode, a comparison signal based on the number of changed bits by comparing respective bit signals of the input data signal and a previous input data signal. The comparison deciding unit generates an inversion control signal which controls whether the input data will be inverted or not. In a second mode, the comparison deciding unit generates an inversion control signal based on the predominant logic state of the input data signal bits. A data converting unit is configured to invert the input data signal in response to the inversion control signal. Method embodiments are also disclosed.
申请公布号 US2007115733(A1) 申请公布日期 2007.05.24
申请号 US20060369341 申请日期 2006.03.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG SEONG-JIN;LIM JEONG-DON
分类号 G11C7/06 主分类号 G11C7/06
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