发明名称 |
PHOTODIODE DEVICE AND PHOTODIODE ARRAY FOR OPTICAL SENSOR USING THE SAME |
摘要 |
The invention relates a photodiode device and a photodiode array using the same capable of detecting short and long wavelengths of visible light at a high efficiency. The photodiode device includes: a first conductivity type semiconductor substrate; a second conductivity type buried layer, an intrinsic semiconductor layer and a first conductivity type semiconductor layer formed on the semiconductor substrate in their order; and a second conductivity type well layer formed on the first conductivity type semiconductor layer. The second conductivity type buried layer, the intrinsic semiconductor layer and the first conductivity type semiconductor layer form a pin junction diode for detecting the long wavelength of visible light, and the first conductivity type semiconductor layer and the second conductivity type well layer form a p-n junction diode for detecting a short wavelength of light.
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申请公布号 |
US2007114626(A1) |
申请公布日期 |
2007.05.24 |
申请号 |
US20060533084 |
申请日期 |
2006.09.19 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KANG SHIN JAE;CHOI WON TAE;KO JOO YUL;PARK DEUK HEE |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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