METHOD FOR CONTACTING A DOPING AREA ON A SEMICONDUCTOR ELEMENT,申请号EP20010995583-传众专利搜索

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发明名称	METHOD FOR CONTACTING A DOPING AREA ON A SEMICONDUCTOR ELEMENT
摘要
申请公布号	EP1348232(B1)	申请公布日期	2007.05.23
申请号	EP20010995583	申请日期	2001.12.06
申请人	INFINEON TECHNOLOGIES AG	发明人	RUF, ALEXANDER;URBANSKY, NORBERT;CLAUSSEN, WILHELM;GAERTNER, THOMAS;SCHMIDBAUER, SVEN
分类号	H01L21/28;H01L21/285;H01L21/768	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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