Semiconductor device and method of fabricating the same

摘要

Provided are a semiconductor device having an improved surface morphology characteristic, and a method of fabricating the same. The semiconductor device includes: an r-plane sapphire substrate (12); an Al x Ga (1-x) N(0‰¤ x<1) buffer layer (14) epitaxially grown on the r-plane sapphire substrate to a thickness in the range of 100-20000 Å in a gas atmosphere containing nitrogen (N 2 ) and at a temperature of 900-1100°C; and a first a-plane GaN layer (16) formed on the buffer layer.