发明名称 |
Transistor and method for manufacturing the same |
摘要 |
A transistor and a method for manufacturing the same are disclosed. One cell transistor having silicon-insulator-silicon ("SIS") structure and two cell transistors having silicon-oxide-nitride-oxide-silicon ("SONOS") structure constitute the transistor of the present invention which can store 2 bits. The cell transistor having SIS structure and the cell transistors having SONOS structure share one common gate electrode so that the transistor of the present invention requires only one voltage generation and control circuit.
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申请公布号 |
US7220651(B2) |
申请公布日期 |
2007.05.22 |
申请号 |
US20040876477 |
申请日期 |
2004.06.28 |
申请人 |
HYNIX SEMICONDUCTOR, INC |
发明人 |
LEE SANG DON;KIM YIL WOOK;AHN JIN HONG;PARK YOUNG JUN |
分类号 |
H01L21/336;H01L21/8247;H01L21/3205;H01L21/8234;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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