发明名称 |
METAL GATE TRANSISTORS WITH EPITAXIAL SOURCE AND DRAIN REGIONS |
摘要 |
An MOS transistor formed on a heavily doped substrate is described. Metal gates are used in low temperature processing to prevent doping from the substrate from diffusing into the channel region of the transistor. |
申请公布号 |
KR20070052329(A) |
申请公布日期 |
2007.05.21 |
申请号 |
KR20077007071 |
申请日期 |
2007.03.28 |
申请人 |
INTEL CORP. |
发明人 |
LINDERT NICK;BRASK JUSTIN;WESTMEYER ANDREW |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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