Method of manufacturing TiAlN thin film using atomic layer deposition,申请号KR20050083460-传众专利搜索

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发明名称	Method of manufacturing TiAlN thin film using atomic layer deposition
摘要
申请公布号	KR100719803(B1)	申请公布日期	2007.05.18
申请号	KR20050083460	申请日期	2005.09.08
申请人		发明人
分类号	H01L21/205;C23C16/34	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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