发明名称 MAGNETICALLY ENHANCED CAPACITIVE PLASMA SOURCE FOR IONIZED PHYSICAL VAPOUR DEPOSITION-IPVD
摘要 A capacitive plasma source (22) for iPVD is immersed in a strong local magnetic field (31) , and may be a drop-in replacement for an inductively coupled plasma (ICP) source of iPVD. The source includes an annular electrode (23) having a magnet pack (30) behind it that includes a surface magnet (33-35) generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets (36 and 32, respectively) , have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate (37) or back magnet (37a) interconnects the back poles of the side magnets (32, 36) . A ferromagnetic shield (37b) behind the magnet pack (30) confines the field away (31) from the iPVD material source (21) .
申请公布号 WO2005095666(A3) 申请公布日期 2007.05.18
申请号 WO2005US01584 申请日期 2005.01.20
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;VUKOVIC, MIRKO;RUSSELL, DERREK, ANDREW 发明人 VUKOVIC, MIRKO;RUSSELL, DERREK, ANDREW
分类号 H01J37/32;C23C14/00;H01J7/24;H01J37/34 主分类号 H01J37/32
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