POLYCRYSTALLINE SILICON LAYER, FLAT PANEL DISPLAY USING THE POLYSCRYSTALLINE SILICON LAYER AND METHOD FOR FABRICATING THE SAME

摘要

A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and a method of fabricating the same are provided. The polycrystalline silicon layer is formed by crystallizing a seed region of an amorphous silicon layer using a super grain silicon (SGS) crystallization technique. The crystallinity of the seed region spread into a crystallization region beyond the seed region. The crystallization region is formed into a semiconductor layer that can be incorporated to make a thin film transistor to drive flat panel displays. The semiconductor layer made by the method of the present invention provides uniform growth of grain boundaries, and characteristics of a thin film transistor made of the semiconductor layer are improved.