发明名称 |
METHOD OF FORMING PITCH MULTIPLED CONTACTS |
摘要 |
<p>Methods of forming electrically conductive and/or semiconductive features for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. The features can have a reduced pitch in one direction and a wider pitch in another direction. Conventional photo- lithography steps can be used in combination with pitch-reduction techniques to form elongate, pitch-reduced features such as bit-line contacts (732), for example.</p> |
申请公布号 |
WO2007027558(A3) |
申请公布日期 |
2007.05.18 |
申请号 |
WO2006US33421 |
申请日期 |
2006.08.28 |
申请人 |
MICRON TECHNOLOGY, INC.;TRAN, LUAN, C. |
发明人 |
TRAN, LUAN, C. |
分类号 |
H01L21/033;H01L21/768;H01L21/8239 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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