发明名称 METHOD OF FORMING PITCH MULTIPLED CONTACTS
摘要 <p>Methods of forming electrically conductive and/or semiconductive features for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. The features can have a reduced pitch in one direction and a wider pitch in another direction. Conventional photo- lithography steps can be used in combination with pitch-reduction techniques to form elongate, pitch-reduced features such as bit-line contacts (732), for example.</p>
申请公布号 WO2007027558(A3) 申请公布日期 2007.05.18
申请号 WO2006US33421 申请日期 2006.08.28
申请人 MICRON TECHNOLOGY, INC.;TRAN, LUAN, C. 发明人 TRAN, LUAN, C.
分类号 H01L21/033;H01L21/768;H01L21/8239 主分类号 H01L21/033
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