SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM

摘要

Disclosed are a substrate processing apparatus and substrate processing method wherein the temperature of a wafer can be effectively controlled even when the wafer is processed at a low pressure, while preventing adhesion of particles or damage to the wafer. Also disclosed is a recording medium used for such a substrate processing apparatus and substrate processing method. A substrate (W) is introduced into a process chamber (32) and the substrate (W) is placed on a stage (40) by bringing the lower surface of the substrate (W) into contact with a contact member (42) arranged on the upper surface of the stage (40) while forming a gap (G) between the substrate (W) and the stage (40). Then, while maintaining the process chamber (32) at a certain pressure, the temperature of the stage (40) is controlled, thereby controlling the temperature of the substrate (W). After that, the process chamber (32) is maintained at a pressure lower than the above-mentioned certain pressure, and the substrate (W) is subjected to a certain treatment.